MJD2955G Transistor Datasheet & Specifications
PNPDPAKGeneral Purpose
VCEO
-
Ic Max
60V
Pd Max
10A
Gain
-55℃~+150℃
Quick Reference
The MJD2955G is a PNP bipolar transistor in a DPAK package. This datasheet provides complete specifications including - breakdown voltage and 60V continuous collector current. Download the MJD2955G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 60V | Collector current |
| Pd Max | 10A | Power dissipation |
| Gain | -55℃~+150℃ | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 2MHz | Emitter-Base voltage |
| Temp | 20W | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJVMJD45H11T4G | PNP | DPAK | - | 80V | 8A |
| MJD42CRLG | PNP | DPAK | - | 100V | 6A |
| MJD42CG | PNP | DPAK | - | 100V | 6A |
| MJD128T4G | PNP | DPAK | - | 120V | 8A |