MJD253T4G Transistor Datasheet & Specifications
PNPTO-252-2(DPAK)General Purpose
VCEO
100V
Ic Max
4A
Pd Max
12.5W
Gain
180
Quick Reference
The MJD253T4G is a PNP bipolar transistor in a TO-252-2(DPAK) package. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the MJD253T4G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 4A | Collector current |
| Pd Max | 12.5W | Power dissipation |
| Gain | 180 | DC current gain |
| Frequency | 40MHz | Transition speed |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4 | PNP | TO-252-2(DPAK) | 100V | 8A | 20W |