MJD122T4 Transistor Datasheet & Specifications
NPNTO-252-2(DPAK)General Purpose
VCEO
100V
Ic Max
8A
Pd Max
20W
Gain
1000
Quick Reference
The MJD122T4 is a NPN bipolar transistor in a TO-252-2(DPAK) package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD122T4 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| VCEO | 100V | Breakdown voltage |
| IC Max | 8A | Collector current |
| Pd Max | 20W | Power dissipation |
| Gain | 1000 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | - | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD1816G-S-TN3-R | NPN | TO-252-2(DPAK) | 100V | 4A | 25W |