MJD117 Transistor Datasheet & Specifications

PNP BJT | JSCJ

PNPTO-252-2LGeneral Purpose
VCEO
100V
Ic Max
2A
Pd Max
1.75W
Gain
500

Quick Reference

The MJD117 is a PNP bipolar transistor in a TO-252-2L package. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the MJD117 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-252-2LPhysical mounting
VCEO100VBreakdown voltage
IC Max2ACollector current
Pd Max1.75WPower dissipation
Gain500DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo25MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJD42CPNPTO-252100V6A20W
MJD42CPNPTO-252100V6A20W
MJD127PNPTO-252100V5A65W