MJB41CG Datasheet & Equivalents
NPN
TO-263 (D2PAK)
High Power
onsemi
VCEO
100V
Ic Max
6A
Pd Max
65W
hFE Gain
30
Quick Reference
The MJB41CG is a NPN bipolar junction transistor in a TO-263 (D2PAK) package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 6A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-263 (D2PAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 6A | Max current handling |
| Power Dissipation (Pd) | 65W | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | 3MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 700uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |