MJ11032 Datasheet & Equivalents
NPN
TO-3
High Power
SPTECH
VCEO
120V
Ic Max
50A
Pd Max
300W
hFE Gain
18000
Quick Reference
The MJ11032 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 120V and continuous collector current of 50A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 120V | Max breakdown voltage |
| Collector Current (Ic) | 50A | Max current handling |
| Power Dissipation (Pd) | 300W | Max thermal limit |
| DC Current Gain (hFE) | 18000 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 3.5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 5mA | Leakage current when OFF |
| Operating Temp | -55℃~+200℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||