MJ10012 Transistor Datasheet & Specifications
NPNTO-3General Purpose
VCEO
400V
Ic Max
10A
Pd Max
175W
Gain
-
Quick Reference
The MJ10012 is a NPN bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 400V breakdown voltage and 10A continuous collector current. Download the MJ10012 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| VCEO | 400V | Breakdown voltage |
| IC Max | 10A | Collector current |
| Pd Max | 175W | Power dissipation |
| Gain | - | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | 2.5V@10A,2A | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -65℃~+150℃ | Operating temp |