MJ1000 Transistor Datasheet & Specifications

NPN BJT | SPTECH

NPNTO-3General Purpose
VCEO
60V
Ic Max
10A
Pd Max
90W
Gain
1000

Quick Reference

The MJ1000 is a NPN bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the MJ1000 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
VCEO60VBreakdown voltage
IC Max10ACollector current
Pd Max90WPower dissipation
Gain1000DC current gain
Frequency-Transition speed
VCEsat4VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+200โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJ3055NPNTO-360V10A117W
2N3772NPNTO-360V20A150W
2N5302NPNTO-360V30A200W
2N5685NPNTO-360V50A300W
2N3055ANPNTO-360V15A115W
2SD211NPNTO-360V10A100W
2SC1777NPNTO-370V6A50W
2SC681NPNTO-370V6A50W