ME20P06-G MOSFET Datasheet & Specifications
P-Channel
TO-252-2(DPAK)
Logic-Level
MATSUKI
Vds Max
60V
Id Max
17.7A
Rds(on)
-
Vgs(th)
3V
Quick Reference
The ME20P06-G is an P-Channel MOSFET in a TO-252-2(DPAK) package, manufactured by MATSUKI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 17.7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MATSUKI | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 17.7A | Max current handling |
| Power Dissipation (Pd) | 39.1W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 958pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |