MDES14N045RH MOSFET Datasheet & Specifications
N-Channel
D2PAK-7L
High-Current
MagnaChip Semicon
Vds Max
135V
Id Max
180A
Rds(on)
3.8mΩ@10V
Vgs(th)
3.9V
Quick Reference
The MDES14N045RH is an N-Channel MOSFET in a D2PAK-7L package, manufactured by MagnaChip Semicon. It supports a drain-source breakdown voltage of 135V and a continuous drain current of 180A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MagnaChip Semicon | Original Manufacturer |
| Package | D2PAK-7L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 135V | Max breakdown voltage |
| Continuous Drain Current (Id) | 180A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 3.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.9V | Voltage required to turn on |
| Gate Charge (Qg) | 123nC@10V | Switching energy |
| Input Capacitance (Ciss) | 9.267nF | Internal gate capacitance |
| Output Capacitance (Coss) | 923pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||