MDDG06R01L MOSFET Datasheet & Specifications
N-Channel
TOLL
Logic-Level
MDD(Microdiode Semiconductor)
Vds Max
60V
Id Max
330A
Rds(on)
1.2mΩ@10V
Vgs(th)
3V
Quick Reference
The MDDG06R01L is an N-Channel MOSFET in a TOLL package, manufactured by MDD(Microdiode Semiconductor). It supports a drain-source breakdown voltage of 60V and a continuous drain current of 330A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MDD(Microdiode Semiconductor) | Original Manufacturer |
| Package | TOLL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 330A | Max current handling |
| Power Dissipation (Pd) | 330W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 7.397nF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.885nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||