MD70N30 MOSFET Datasheet & Specifications

N-Channel TO-3P High-Current Minos
Vds Max
300V
Id Max
70A
Rds(on)
32mΩ@10V
Vgs(th)
4V

Quick Reference

The MD70N30 is an N-Channel MOSFET in a TO-3P package, manufactured by Minos. It supports a drain-source breakdown voltage of 300V and a continuous drain current of 70A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMinosOriginal Manufacturer
PackageTO-3PPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)300VMax breakdown voltage
Continuous Drain Current (Id)70AMax current handling
Power Dissipation (Pd)430WMax thermal limit
On-Resistance (Rds(on))32mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)155nC@10VSwitching energy
Input Capacitance (Ciss)9.55nFInternal gate capacitance
Output Capacitance (Coss)895pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFP4868PBF-MNS N-Channel TO-3P 300V 70A 32mΩ@10V 4V
Minos 📄 PDF
CS70N30ANR N-Channel TO-3P 300V 70A 42mΩ@10V 4V
CRMICRO 📄 PDF