LND150K1-G MOSFET Datasheet & Specifications
N-Channel
SOT-23
High-Voltage
MICROCHIP
Vds Max
500V
Id Max
13mA
Rds(on)
-
Vgs(th)
-
Quick Reference
The LND150K1-G is an N-Channel MOSFET in a SOT-23 package, manufactured by MICROCHIP. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 13mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 500V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13mA | Max current handling |
| Power Dissipation (Pd) | 360mW | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 10pF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.5pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BSS127S-7 | N-Channel | SOT-23 | 600V | 70mA | 160ฮฉ@10V | 4.5V | DIODES ๐ PDF |
| BSS127H6327XTSA2 | N-Channel | SOT-23 | 600V | 21mA | 500ฮฉ@10V | 2.6V | Infineon ๐ PDF |