LMBT3904N3T5G Datasheet & Equivalents
NPN
DFN-3 (0.6x1)
General Purpose
TECH PUBLIC
VCEO
50V
Ic Max
100mA
Pd Max
100mW
hFE Gain
120
Quick Reference
The LMBT3904N3T5G is a NPN bipolar junction transistor in a DFN-3 (0.6x1) package, manufactured by TECH PUBLIC. It supports a breakdown voltage of 50V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | DFN-3 (0.6x1) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 100mW | Max thermal limit |
| DC Current Gain (hFE) | 120 | Base signal amplification ratio |
| Transition Frequency (fT) | 60MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||