LBTP560Y3T1G Transistor Datasheet & Specifications

PNP BJT | LRC

PNPSOT-89General Purpose
VCEO
60V
Ic Max
4.3A
Pd Max
550mW
Gain
100

Quick Reference

The LBTP560Y3T1G is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 60V breakdown voltage and 4.3A continuous collector current. Download the LBTP560Y3T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO60VBreakdown voltage
IC Max4.3ACollector current
Pd Max550mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo120MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTAPNPSOT-8960V4.3A1.5W
BCX51-16PNPSOT-8945V1A500mW
2STF2360PNPSOT-8960V3A1.4W
DPLS350Y-13PNPSOT-8950V3A2W
PBSS5250X-HXYPNPSOT-8950V2A500mW
2SA1213PNPSOT-8950V2A500mW
BCX52PNPSOT-8960V1A1W