LBTP180Y3T1G Transistor Datasheet & Specifications

PNP BJT | LRC

PNPSOT-89General Purpose
VCEO
80V
Ic Max
1A
Pd Max
550mW
Gain
-

Quick Reference

The LBTP180Y3T1G is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the LBTP180Y3T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max550mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTAPNPSOT-8960V4.3A1.5W
2STF2360PNPSOT-8960V3A1.4W
FCX593TAPNPSOT-89100V1A2W
BCX52PNPSOT-8960V1A1W
BCX53-16PNPSOT-89-80V-
FCX591TAPNPSOT-8960V1A1.5W
BCX53-16PNPSOT-89-80V-
BCX53-16PNPSOT-89-80V-
BCX53 AH HDPNPSOT-8980V1A500mW