LBC856BWT1G Transistor Datasheet & Specifications
PNPSC-70General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
150mW
Gain
220
Quick Reference
The LBC856BWT1G is a PNP bipolar transistor in a SC-70 package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the LBC856BWT1G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SC-70 | Physical mounting |
| VCEO | 65V | Breakdown voltage |
| IC Max | 100mA | Collector current |
| Pd Max | 150mW | Power dissipation |
| Gain | 220 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 650mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| L2SA1576AQT1G | PNP | SC-70 | 50V | 150mA | 150mW |