LBC848BWT1G Transistor Datasheet & Specifications
NPNSC-70General Purpose
VCEO
30V
Ic Max
100mA
Pd Max
150mW
Gain
200
Quick Reference
The LBC848BWT1G is a NPN bipolar transistor in a SC-70 package. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the LBC848BWT1G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SC-70 | Physical mounting |
| VCEO | 30V | Breakdown voltage |
| IC Max | 100mA | Collector current |
| Pd Max | 150mW | Power dissipation |
| Gain | 200 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SCR502U3HZGT106 | NPN | SC-70 | 30V | 500mA | 200mW |