LBC847BPDW1T1G Transistor Datasheet & Specifications
NPN+PNPSOT-363(SC-88)General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
380mW
Gain
200
Quick Reference
The LBC847BPDW1T1G is a NPN+PNP bipolar transistor in a SOT-363(SC-88) package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the LBC847BPDW1T1G datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-363(SC-88) | Physical mounting |
| VCEO | 45V | Breakdown voltage |
| IC Max | 100mA | Collector current |
| Pd Max | 380mW | Power dissipation |
| Gain | 200 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| LBC847CPDW1T1G | NPN+PNP | SOT-363(SC-88) | 45V | 100mA | 380mW |