KTD600K-Y-U/PH Datasheet & Equivalents
NPN
TO-126
General Purpose
KEC
VCEO
120V
Ic Max
1A
Pd Max
1.5W
hFE Gain
100
Quick Reference
The KTD600K-Y-U/PH is a NPN bipolar junction transistor in a TO-126 package, manufactured by KEC. It supports a breakdown voltage of 120V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KEC | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 120V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 130MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 150mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |