KSC1008YBU Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-92-3General Purpose
VCEO
60V
Ic Max
700mA
Pd Max
800mW
Gain
120

Quick Reference

The KSC1008YBU is a NPN bipolar transistor in a TO-92-3 package. This datasheet provides complete specifications including 60V breakdown voltage and 700mA continuous collector current. Download the KSC1008YBU datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92-3Physical mounting
VCEO60VBreakdown voltage
IC Max700mACollector current
Pd Max800mWPower dissipation
Gain120DC current gain
Frequency50MHzTransition speed
VCEsat200mVSaturation voltage
Vebo-Emitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BC337NPNTO-92-345V800mA625mW
BC33725TANPNTO-92-345V800mA625mW
2SD1616AG-G-T92-KNPNTO-92-360V1A750mW