KSB772YS-HXY Transistor Datasheet & Specifications
PNPTO-126General Purpose
VCEO
30V
Ic Max
3A
Pd Max
1W
Gain
-
Quick Reference
The KSB772YS-HXY is a PNP bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the KSB772YS-HXY datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| VCEO | 30V | Breakdown voltage |
| IC Max | 3A | Collector current |
| Pd Max | 1W | Power dissipation |
| Gain | - | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 50MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|