KSA1220A Datasheet & Equivalents
PNP
TO-126
High Power
JSCJ
VCEO
160V
Ic Max
1.2A
Pd Max
20W
hFE Gain
35
Quick Reference
The KSA1220A is a PNP bipolar junction transistor in a TO-126 package, manufactured by JSCJ. It supports a breakdown voltage of 160V and continuous collector current of 1.2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 1.2A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| DC Current Gain (hFE) | 35 | Base signal amplification ratio |
| Transition Frequency (fT) | 175MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 700mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||