KPY3203D MOSFET Datasheet & Specifications
P-Channel
DFN-8(5x6)
Logic-Level
KIA Semicon Tech
Vds Max
30V
Id Max
100A
Rds(on)
3.5mΩ@10V
Vgs(th)
2.5V
Quick Reference
The KPY3203D is an P-Channel MOSFET in a DFN-8(5x6) package, manufactured by KIA Semicon Tech. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KIA Semicon Tech | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 62.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 130nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AON6407 | P-Channel | DFN-8(5x6) | 30V | 100A | 4.1mΩ@10V | 1V | TECH PUBLIC 📄 PDF |
| SI7149ADP-T1-GE3(TOKMAS) | P-Channel | DFN-8(5x6) | 30V | 105A | 5.5mΩ@10V | 2.5V | Tokmas 📄 PDF |