IXTP16N50P MOSFET Datasheet & Specifications

N-Channel TO-220-3 High-Voltage Littelfuse/IXYS
Vds Max
500V
Id Max
16A
Rds(on)
400mΩ
Vgs(th)
5.5V

Quick Reference

The IXTP16N50P is an N-Channel MOSFET in a TO-220-3 package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 500V and a continuous drain current of 16A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageTO-220-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)500VMax breakdown voltage
Continuous Drain Current (Id)16AMax current handling
Power Dissipation (Pd)300WMax thermal limit
On-Resistance (Rds(on))400mΩResistance when turned fully on
Gate Threshold (Vgs(th))5.5VVoltage required to turn on
Gate Charge (Qg)43nC@10VSwitching energy
Input Capacitance (Ciss)2.25nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STF26N60M2 N-Channel TO-220-3 600V 20A 165mΩ@10V 4V