IXTA2R4N120P MOSFET Datasheet & Specifications
N-Channel
TO-263AA
High-Voltage
Littelfuse/IXYS
Vds Max
1.2kV
Id Max
2.4A
Rds(on)
7.5ฮฉ@10V
Vgs(th)
4.5V
Quick Reference
The IXTA2R4N120P is an N-Channel MOSFET in a TO-263AA package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 2.4A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Littelfuse/IXYS | Original Manufacturer |
| Package | TO-263AA | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.4A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.5ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 37nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.207nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IXTA4N150HV | N-Channel | TO-263AA | 1.5kV | 4A | 6ฮฉ@10V | 5V | Littelfuse/IXYS ๐ PDF |