IXTA24N65X2 MOSFET Datasheet & Specifications

N-Channel TO-263 High-Voltage Littelfuse/IXYS
Vds Max
650V
Id Max
24A
Rds(on)
145mΩ@10V
Vgs(th)
5V

Quick Reference

The IXTA24N65X2 is an N-Channel MOSFET in a TO-263 package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 24A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageTO-263Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)24AMax current handling
Power Dissipation (Pd)390WMax thermal limit
On-Resistance (Rds(on))145mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)36nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BMB65N065UC1 N-Channel TO-263 650V 55A 65mΩ@10V 3.8V
Bestirpower
CMB65R080SD N-Channel TO-263 650V 55A 70mΩ@10V 5V
NCE65TF099D N-Channel TO-263 650V 38A 89mΩ@10V 3.5V
ASB65R120EFD N-Channel TO-263 655V 30A 120mΩ@10V 5V