IXTA08N100D2HV MOSFET Datasheet & Specifications
N-Channel
TO-263HV
Logic-Level
Littelfuse/IXYS
Vds Max
1kV
Id Max
800mA
Rds(on)
21Ω@0V
Vgs(th)
2V
Quick Reference
The IXTA08N100D2HV is an N-Channel MOSFET in a TO-263HV package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 1kV and a continuous drain current of 800mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Littelfuse/IXYS | Original Manufacturer |
| Package | TO-263HV | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 800mA | Max current handling |
| Power Dissipation (Pd) | 60W | Max thermal limit |
| On-Resistance (Rds(on)) | 21Ω@0V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 14.6nC | Switching energy |
| Input Capacitance (Ciss) | 325pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||