IXFN120N65X2 MOSFET Datasheet & Specifications
N-Channel
SOT-227
High-Voltage
Littelfuse/IXYS
Vds Max
650V
Id Max
108A
Rds(on)
24mฮฉ@10V
Vgs(th)
5V
Quick Reference
The IXFN120N65X2 is an N-Channel MOSFET in a SOT-227 package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 108A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Littelfuse/IXYS | Original Manufacturer |
| Package | SOT-227 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 108A | Max current handling |
| Power Dissipation (Pd) | 890W | Max thermal limit |
| On-Resistance (Rds(on)) | 24mฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 240nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14nF | Internal gate capacitance |
| Output Capacitance (Coss) | 8.7nF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IXFN170N65X2 | N-Channel | SOT-227 | 650V | 170A | 13mฮฉ@10V | 5V | Littelfuse/IXYS ๐ PDF |
| S1P14R120HSE-A | N-Channel | SOT-227 | 1.2kV | 120A | - | 2.8V | Sichainsemi ๐ PDF |