ISG0613N04NM6HSCATMA1 MOSFET Array Datasheet & Equivalents
N-Channel Array
WHITFN-10
Logic-Level
Infineon
Vds Max
40V
Id Max
299A
Rds(on)
0.88mΩ@10V
Vgs(th)
2.8V
Quick Reference
The ISG0613N04NM6HSCATMA1 is a N-Channel Array in a WHITFN-10 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 299A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | WHITFN-10 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 299A | Max current handling |
| Power Dissipation (Pd) | 167W | Max thermal limit |
| On-Resistance (Rds(on)) | 0.88mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.8V | Voltage required to turn on |
| Gate Charge (Qg) | 69nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.03nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||