IRFR320TRPbF MOSFET Datasheet & Specifications

N-Channel DPAK(TO-252) High-Voltage VISHAY
Vds Max
400V
Id Max
3.1A
Rds(on)
1.8Ī©@10V
Vgs(th)
4V

Quick Reference

The IRFR320TRPbF is an N-Channel MOSFET in a DPAK(TO-252) package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 400V and a continuous drain current of 3.1A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageDPAK(TO-252)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)400VMax breakdown voltage
Continuous Drain Current (Id)3.1AMax current handling
Power Dissipation (Pd)42WMax thermal limit
On-Resistance (Rds(on))1.8Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)20nC@10VSwitching energy
Input Capacitance (Ciss)350pFInternal gate capacitance
Output Capacitance (Coss)120pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MSJU11N65A-TP N-Channel DPAK(TO-252) 650V 11A 330mΩ@10V 3.4V