IRF9510PBF MOSFET Datasheet & Specifications

P-Channel TO-220AB Standard Power VISHAY
Vds Max
100V
Id Max
2.8A
Rds(on)
1.2Ī©@10V
Vgs(th)
4V

Quick Reference

The IRF9510PBF is an P-Channel MOSFET in a TO-220AB package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 2.8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)2.8AMax current handling
Power Dissipation (Pd)43WMax thermal limit
On-Resistance (Rds(on))1.2Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)8.7nC@10VSwitching energy
Input Capacitance (Ciss)200pFInternal gate capacitance
Output Capacitance (Coss)94pFInternal output capacitance
Operating Temp-55ā„ƒ~+175ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF5210PBF P-Channel TO-220AB 100V 40A 60mΩ@10V 4V
Infineon šŸ“„ PDF
IRF9530NPBF P-Channel TO-220AB 100V 14A 200mΩ@10V 4V
Infineon šŸ“„ PDF
IRF9540PBF P-Channel TO-220AB 100V 19A 200mΩ@10V 4V
IRF9640PBF P-Channel TO-220AB 200V 11A 500mΩ@10V 4V
IRF9630PBF P-Channel TO-220AB 200V 6.5A 800mΩ@10V 4V