IRF7343TRPBF-VB MOSFET Datasheet & Specifications
P-Channel
SO-8
Logic-Level
VBsemi Elec
Vds Max
60V
Id Max
5.3A
Rds(on)
26mΩ@10V;55mΩ@10V
Vgs(th)
1V
Quick Reference
The IRF7343TRPBF-VB is an P-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 5.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.3A | Max current handling |
| Power Dissipation (Pd) | 3.1W;3.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 26mΩ@10V;55mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 14.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 665pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI4599DY-T1-GE3-VB | P-Channel | SO-8 | 60V | 5.3A | 26mΩ@10V 55mΩ@10V |
1V | VBsemi Elec 📄 PDF |