IRF7343TRPBF MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SO-8 Logic-Level Infineon
Vds Max
55V
Id Max
4.7A
Rds(on)
50mΩ@10V
Vgs(th)
1V

Quick Reference

The IRF7343TRPBF is a Dual N/P-Channel in a SO-8 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 55V and a continuous drain current of 4.7A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)55VMax breakdown voltage
Continuous Drain Current (Id)4.7AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))50mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)36nC@10VSwitching energy
Input Capacitance (Ciss)740pFInternal gate capacitance
Output Capacitance (Coss)190pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
ZXMC4559DN8TA Dual N/P-Channel SO-8 60V 4.7A 105mΩ@10V 1V
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