IRF5305PBF MOSFET Datasheet & Specifications

P-Channel TO-220AB Standard Power Infineon
Vds Max
55V
Id Max
31A
Rds(on)
60mΩ@10V
Vgs(th)
4V

Quick Reference

The IRF5305PBF is an P-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 55V and a continuous drain current of 31A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)55VMax breakdown voltage
Continuous Drain Current (Id)31AMax current handling
Power Dissipation (Pd)110WMax thermal limit
On-Resistance (Rds(on))60mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)63nC@10VSwitching energy
Input Capacitance (Ciss)1.2nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF4905PBF P-Channel TO-220AB 55V 74A 20mΩ@10V 4V
Infineon 📄 PDF
IRF5210PBF P-Channel TO-220AB 100V 40A 60mΩ@10V 4V
Infineon 📄 PDF