IRF3710PBF MOSFET Datasheet & Specifications

N-Channel TO-220AB High-Current Infineon
Vds Max
100V
Id Max
57A
Rds(on)
23mΩ@10V
Vgs(th)
4V

Quick Reference

The IRF3710PBF is an N-Channel MOSFET in a TO-220AB package, manufactured by Infineon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 57A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)57AMax current handling
Power Dissipation (Pd)200WMax thermal limit
On-Resistance (Rds(on))23mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)130nC@10VSwitching energy
Input Capacitance (Ciss)3.13nFInternal gate capacitance
Output Capacitance (Coss)410pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFB4410ZPBF N-Channel TO-220AB 100V 97A 9mΩ@10V 4V
Infineon 📄 PDF
SUP85N10-10-E3 N-Channel TO-220AB 100V 85A 12mΩ@4.5V 3V
VISHAY 📄 PDF
IXTP60N20T N-Channel TO-220AB 200V 60A 32mΩ@10V 3V
Littelfuse/IXYS 📄 PDF
CS60N20A8R N-Channel TO-220AB 200V 60A 39mΩ@10V 4V
CRMICRO 📄 PDF