IQE013N04LM6CGATMA1 MOSFET Datasheet & Specifications
N-Channel
TTFN-9-1
Logic-Level
Infineon
Vds Max
40V
Id Max
205A
Rds(on)
1.35mΩ@10V
Vgs(th)
2V
Quick Reference
The IQE013N04LM6CGATMA1 is an N-Channel MOSFET in a TTFN-9-1 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 205A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TTFN-9-1 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 205A | Max current handling |
| Power Dissipation (Pd) | 107W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.35mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 55nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.9nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.2nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||