IPTG111N20NM3FDATMA1 MOSFET Datasheet & Specifications
N-Channel
HSOG-8
High-Current
Infineon
Vds Max
200V
Id Max
108A
Rds(on)
11.1mΩ@10V
Vgs(th)
4V
Quick Reference
The IPTG111N20NM3FDATMA1 is an N-Channel MOSFET in a HSOG-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 108A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | HSOG-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 108A | Max current handling |
| Power Dissipation (Pd) | 375W | Max thermal limit |
| On-Resistance (Rds(on)) | 11.1mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 81nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 520pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||