IPP048N04N G MOSFET Datasheet & Specifications
N-Channel
TO-220-3
High-Current
Infineon
Vds Max
40V
Id Max
70A
Rds(on)
4mΩ@10V
Vgs(th)
4V
Quick Reference
The IPP048N04N G is an N-Channel MOSFET in a TO-220-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 70A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-220-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 70A | Max current handling |
| Power Dissipation (Pd) | 79W | Max thermal limit |
| On-Resistance (Rds(on)) | 4mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 31nC | Switching energy |
| Input Capacitance (Ciss) | 2.5nF | Internal gate capacitance |
| Output Capacitance (Coss) | 740pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPP023N08N5AKSA1 | N-Channel | TO-220-3 | 80V | 120A | 2.3mΩ@10V | 3.8V | Infineon 📄 PDF |
| IPP023N10N5 | N-Channel | TO-220-3 | 100V | 120A | 2.3mΩ@10V | 3V | Infineon 📄 PDF |