IPG16N10S4-61 MOSFET Array Datasheet & Equivalents
N-Channel Array
TDSON-8
High-Voltage
Infineon
Vds Max
100V
Id Max
16A
Rds(on)
61mΩ@10V
Vgs(th)
3.5V
Quick Reference
The IPG16N10S4-61 is a N-Channel Array in a TDSON-8 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 16A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 16A | Max current handling |
| Power Dissipation (Pd) | 29W | Max thermal limit |
| On-Resistance (Rds(on)) | 61mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 490pF | Internal gate capacitance |
| Output Capacitance (Coss) | 156pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IPG20N10S4L22ATMA1 | N-Channel Array | TDSON-8 | 100V | 20A | 22mΩ@10V | 2.1V | Infineon 📄 PDF |