IPB19DP10NMATMA1 MOSFET Datasheet & Specifications
P-Channel
TO-263-3
Standard Power
Infineon
Vds Max
100V
Id Max
13.8A
Rds(on)
185mΩ@10V
Vgs(th)
4V
Quick Reference
The IPB19DP10NMATMA1 is an P-Channel MOSFET in a TO-263-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 13.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-263-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13.8A | Max current handling |
| Power Dissipation (Pd) | 83W | Max thermal limit |
| On-Resistance (Rds(on)) | 185mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 45nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 140pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||