IPB110P06LM MOSFET Datasheet & Specifications
P-Channel
TO-263-3
Logic-Level
Infineon
Vds Max
60V
Id Max
100A
Rds(on)
11mΩ@10V
Vgs(th)
2V
Quick Reference
The IPB110P06LM is an P-Channel MOSFET in a TO-263-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-263-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 300W | Max thermal limit |
| On-Resistance (Rds(on)) | 11mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 281nC@10V | Switching energy |
| Input Capacitance (Ciss) | 8.5nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.2nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||