IPB060N15N5(TOKMAS) MOSFET Datasheet & Specifications

N-Channel TO-263-7L High-Current Tokmas
Vds Max
150V
Id Max
220A
Rds(on)
6mΩ@6V
Vgs(th)
4V

Quick Reference

The IPB060N15N5(TOKMAS) is an N-Channel MOSFET in a TO-263-7L package, manufactured by Tokmas. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 220A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTokmasOriginal Manufacturer
PackageTO-263-7LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)150VMax breakdown voltage
Continuous Drain Current (Id)220AMax current handling
Power Dissipation (Pd)250WMax thermal limit
On-Resistance (Rds(on))6mΩ@6VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)158nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
FDB0690N1507L(TOKMAS) N-Channel TO-263-7L 150V 220A 6mΩ@6V 4V
Tokmas 📄 PDF
IPB065N15N3G(TOKMAS) N-Channel TO-263-7L 150V 220A 6mΩ@6V 4V
Tokmas 📄 PDF