IPA032N06N3 G MOSFET Datasheet & Specifications

N-Channel TO-220FP-3 Logic-Level Infineon
Vds Max
60V
Id Max
84A
Rds(on)
3.2mΩ@10V
Vgs(th)
3V

Quick Reference

The IPA032N06N3 G is an N-Channel MOSFET in a TO-220FP-3 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 84A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-220FP-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)84AMax current handling
Power Dissipation (Pd)41WMax thermal limit
On-Resistance (Rds(on))3.2mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)124nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.