IMZ1AFRAT108 Datasheet & Equivalents
NPN+PNP
SOT-457
General Purpose
ROHM
VCEO
50V
Ic Max
150mA
Pd Max
300mW
hFE Gain
120
Quick Reference
The IMZ1AFRAT108 is a NPN+PNP bipolar junction transistor array in a SOT-457 package, manufactured by ROHM. It supports a breakdown voltage of 50V and continuous collector current of 150mA per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-457 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 150mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 120 | Base signal amplification ratio |
| Transition Frequency (fT) | 180MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||