IMBF170R1K0M1XTMA1 MOSFET Datasheet & Specifications
N-Channel
TO-263-7-13
High-Voltage
Infineon
Vds Max
1.7kV
Id Max
5.2A
Rds(on)
809mΩ@15V
Vgs(th)
4.5V
Quick Reference
The IMBF170R1K0M1XTMA1 is an N-Channel MOSFET in a TO-263-7-13 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 1.7kV and a continuous drain current of 5.2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TO-263-7-13 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.7kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.2A | Max current handling |
| Power Dissipation (Pd) | 68W | Max thermal limit |
| On-Resistance (Rds(on)) | 809mΩ@15V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 5nC | Switching energy |
| Input Capacitance (Ciss) | 275pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||