IAUC45N04S6N070HATMA1 MOSFET Array Datasheet & Equivalents
N-Channel Array
TDSON-8
Logic-Level
Infineon
Vds Max
40V
Id Max
45A
Rds(on)
9mΩ@7V
Vgs(th)
3V
Quick Reference
The IAUC45N04S6N070HATMA1 is a N-Channel Array in a TDSON-8 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 45A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 45A | Max current handling |
| Power Dissipation (Pd) | 41W | Max thermal limit |
| On-Resistance (Rds(on)) | 9mΩ@7V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@10V | Switching energy |
| Input Capacitance (Ciss) | 701pF | Internal gate capacitance |
| Output Capacitance (Coss) | 224pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IAUC60N04S6L030HATMA1 | N-Channel Array | TDSON-8 | 40V | 60A | 3mΩ@10V | 2V | Infineon 📄 PDF |
| IAUC60N04S6N031HATMA1 | N-Channel Array | TDSON-8 | 40V | 60A | 3.1mΩ@10V | 3V | Infineon 📄 PDF |
| IAUC60N04S6L045HATMA1 | N-Channel Array | TDSON-8 | 40V | 60A | 4.5mΩ@10V | 2V | Infineon 📄 PDF |
| IAUC60N04S6N050HATMA1 | N-Channel Array | TDSON-8 | 40V | 60A | 5mΩ@10V | 3V | Infineon 📄 PDF |
| IAUC45N04S6L063HATMA1 | N-Channel Array | TDSON-8 | 40V | 45A | 6.3mΩ@10V | 2V | Infineon 📄 PDF |
| BSC112N06LDATMA1 | N-Channel Array | TDSON-8 | 60V | 57A | 15.8mΩ@4.5V | 2.2V | Infineon 📄 PDF |