IAUC120N06S5N017ATMA1 MOSFET Datasheet & Specifications
N-Channel
TDSON-8
High-Current
Infineon
Vds Max
60V
Id Max
120A
Rds(on)
1.7mΩ@10V
Vgs(th)
3.4V
Quick Reference
The IAUC120N06S5N017ATMA1 is an N-Channel MOSFET in a TDSON-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 167W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.4V | Voltage required to turn on |
| Gate Charge (Qg) | 95.9nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.952nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.507nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ISC011N06LM5ATMA1 | N-Channel | TDSON-8 | 60V | 288A | 1.15mΩ@10V | 2.3V | Infineon 📄 PDF |
| BSC042NE7NS3GATMA1 | N-Channel | TDSON-8 | 75V | 132A | 4.2mΩ@10V | 3.8V | Infineon 📄 PDF |
| ISC0802NLSATMA1 | N-Channel | TDSON-8 | 100V | 150A | 3.3mΩ@10V 4.3mΩ@4.5V |
1.6V | Infineon 📄 PDF |