HYG110N11LS1C2 MOSFET Datasheet & Specifications
N-Channel
PDFN-8(4.9x5.8)
Logic-Level
HUAYI
Vds Max
115V
Id Max
60A
Rds(on)
19mΩ@4.5V
Vgs(th)
3V
Quick Reference
The HYG110N11LS1C2 is an N-Channel MOSFET in a PDFN-8(4.9x5.8) package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 115V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN-8(4.9x5.8) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 115V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 71.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 19mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 45.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.606nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||