HYG060N08NS1D MOSFET Datasheet & Specifications
N-Channel
TO-252-2L
High-Current
HUAYI
Vds Max
80V
Id Max
80A
Rds(on)
6.5mΩ@10V
Vgs(th)
4V
Quick Reference
The HYG060N08NS1D is an N-Channel MOSFET in a TO-252-2L package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 48nC | Switching energy |
| Input Capacitance (Ciss) | 2.96nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.15nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |